Method of using a single chip process to manufacture a gate dielectric layer

• Main Authors: HWANG, YAW-LIN, LIN, CHIN-HSIANG, LUOH, TUUNG
• Format: Patent
• Language: English
• Published: 21.11.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A kind of method for using a single chip process to manufacture a gate dielectric layer is disclosed in the present invention. The present invention includes two steps conducted in a single-wafer reaction room and a single-wafer rapid thermal reaction room, respectively. Firstly, a single silicon wafer is placed in the single-wafer reaction room and is followed by a nitridation process conducted to form a silicon oxide layer containing nitrogen on the surface of the silicon wafer. Afterward, the silicon wafer is placed in the single-wafer rapid thermal reaction room to perform an oxidation process along with the steam so as to oxidize the nitrogen-contained silicon oxide layer to form a silicon oxide layer having the silicon-oxy-nitride bottom layer for use as a gate dielectric layer.