Dechucking with N2/O2 plasma

A method for dechucking a wafer placed on an electrostatic chuck after plasma processing of the wafer comprises the steps of providing a flow of nitrogen and oxygen, maintaining an N2/O2 plasma in the chamber; and changing the electric potential of a chuck electrode to a dechucking electric potentia...

Full description

Saved in:
Bibliographic Details
Main Authors CHEN, CHIH-PANG, YU, HUEIN, SUNG, SHING-LI
Format Patent
LanguageEnglish
Published 11.11.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for dechucking a wafer placed on an electrostatic chuck after plasma processing of the wafer comprises the steps of providing a flow of nitrogen and oxygen, maintaining an N2/O2 plasma in the chamber; and changing the electric potential of a chuck electrode to a dechucking electric potential before turning off the plasma.
Bibliography:Application Number: TW20020123616