Circuit with a non-volatile memory and method of erasing the memory a number of bits at a time

The threshold of a number of storage transistors is shifted in steps. After such a step, a collective current through the main current channels of a number of these storage transistors is sensed. The same gate-source voltage is applied to all these transistors during sensing. The collective current...

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Bibliographic Details
Main Author CUPPENS, ROGER
Format Patent
LanguageEnglish
Published 11.11.2003
Edition7
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The threshold of a number of storage transistors is shifted in steps. After such a step, a collective current through the main current channels of a number of these storage transistors is sensed. The same gate-source voltage is applied to all these transistors during sensing. The collective current indicates whether the threshold of all transistors has been sufficiently shifted. If not, a further threshold shifting step is applied.
Bibliography:Application Number: TW20000115334