Method of fabricating a poly-poly capacitor with a SiGe BiCMOS integration scheme

A method for fabricating a poly-poly capacitor integrated with a BiCMOS process which includes forming a lower plate electrode of a poly-poly capacitor during deposition of a gate electrode of a CMOS transistor; and forming an upper SiGe plate electrode during growth of a SiGe base region of a heter...

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Bibliographic Details
Main Authors DUNN, JAMES STUART, ST ONGE, STEPHEN ARTHUR, COOLBAUGH, DOUGLAS DUANE
Format Patent
LanguageEnglish
Published 21.07.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating a poly-poly capacitor integrated with a BiCMOS process which includes forming a lower plate electrode of a poly-poly capacitor during deposition of a gate electrode of a CMOS transistor; and forming an upper SiGe plate electrode during growth of a SiGe base region of a heterojunction bipolar transistor.
Bibliography:Application Number: TW200190131170