Etching method with high silicon oxide to silicon oxynitride selectivity

An etching method with high silicon oxide to silicon oxynitride selectivity is provided by using an etching process gas. The etching process gas is a mixed gas at least containing a fluorocarbon, an oxidizer and an inert gas.

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Bibliographic Details
Main Authors PENG, BAUING, GUO, MEI-RU, TSAI, MING-HUAN, TAU, HUNG-YUAN
Format Patent
LanguageEnglish
Published 01.07.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An etching method with high silicon oxide to silicon oxynitride selectivity is provided by using an etching process gas. The etching process gas is a mixed gas at least containing a fluorocarbon, an oxidizer and an inert gas.
Bibliography:Application Number: TW20010132261