Semiconductor device and method therefor

Epitaxial silicon is grown to form elevated source/drain extensions for transistors on silicon-on-insulator (SOI) substrates. An offset linear layer is formed between the gate and the epitaxial silicon to prevent shorting. In one embodiment, the offset linear layer is a nitride and in another embodi...

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Bibliographic Details
Main Authors CHENG, BAOHONG, LII, YEONG-JYH T
Format Patent
LanguageEnglish
Published 21.06.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Epitaxial silicon is grown to form elevated source/drain extensions for transistors on silicon-on-insulator (SOI) substrates. An offset linear layer is formed between the gate and the epitaxial silicon to prevent shorting. In one embodiment, the offset linear layer is a nitride and in another embodiment it is an oxide. The resulting structure decreases extension resistance and improves the scalability of SOI transistors by increasing the thickness of silicon underneath the source and drain regions, while keeping the silicon underneath the gate thin. This allows for the reduction in gate length without decreasing the functionality of the transistor.
Bibliography:Application Number: TW20020109125