Patterning method

• Main Authors: HATAKEYAMA, JUN, NAGURA, SHIGEHIRO
• Format: Patent
• Language: English
• Published: 21.05.2003
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

A method for patterning a chemically amplified positive resist material comprising a base polymer having acid labile groups which are eliminated by acid, a photoacid generator and an organic solvent, in which the resist material is applied onto a substrate to a uniform thickness so as to form a resist film that is subsequently exposed, baked, then developed with a developer to form a positive pattern is characterized by using as the base polymer a mixture of at least two base polymers having mutually differing acid labile groups or a base polymer having at least two mutually differing acid labile groups on the same molecule and adjusting the types of the mutually differing acid labile groups and their contents within the base polymer such that, when the chemically amplified positive resist material is applied onto a substrate to a uniform thickness so as to form a resist film that is subsequently exposed, baked, then dissolved with a developer, the exposure El which results in an average dissolution rate of 100 Å/s for 500 Å from the surface of the resist film toward the substrate and the exposure E2 which results in an average dissolution rate of 100 Å/s for 1000 Å from the surface of the substrate toward the resist film surface satisfy the relationship: -0.2 < (E2-E1/E2 < 0.2.