Process for producing silicon single crystal
In a process for producing a silicon single crystal by an MCZ method, the pull-up of a silicon single crystal is performed under conditions which satisfy the following relations: 0.4 ≤ v1, 0.628x104 ≤ v2 ≤ 1.0x104, and v2 ≤ -3.72x104 v1 + 4.35x104, where v1 is the crystal growth speed(mm/min), and v...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
21.03.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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