Process for producing silicon single crystal

In a process for producing a silicon single crystal by an MCZ method, the pull-up of a silicon single crystal is performed under conditions which satisfy the following relations: 0.4 ≤ v1, 0.628x104 ≤ v2 ≤ 1.0x104, and v2 ≤ -3.72x104 v1 + 4.35x104, where v1 is the crystal growth speed(mm/min), and v...

Full description

Saved in:
Bibliographic Details
Main Authors KIMURA, MASANORI, MURAOKA, SHOZO, IINO, EIICHI
Format Patent
LanguageEnglish
Published 21.03.2003
Edition7
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online AccessGet full text

Cover

More Information
Summary:In a process for producing a silicon single crystal by an MCZ method, the pull-up of a silicon single crystal is performed under conditions which satisfy the following relations: 0.4 ≤ v1, 0.628x104 ≤ v2 ≤ 1.0x104, and v2 ≤ -3.72x104 v1 + 4.35x104, where v1 is the crystal growth speed(mm/min), and v2 is the crystal periphery speed (mm/min)when the crystal is pulled up while being rotated. A large-diameter silicon single crystal is produced by the MCZ method without causing any twist in the crystal.
Bibliography:Application Number: TW199786102898