Manufacturing method for self-align contact with removable spacer

• Main Authors: HE, GUEIUEN, LI, SHIAU-WEN, LIAU, YING-RUEI, HUNG, JENG-YU
• Format: Patent
• Language: English
• Published: 01.01.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The inventive method includes the following steps: patterning a gate structure on the substrate; conducting ion implantation to form lightly doped drain; then, depositing a thin liner on the features of the substrate; sequentially forming the removable spacers and attaching on the edges of the liner; building sources and drains in the substrate by ion implantation; then, using wet dipping method to remove the removable spacer; forming a borderless layer on the urface of the liner; forming a dielectric layer on the gate structure, in which the dielectric layer is composed of silicon dioxide, BPSG and silicon oxide glass; and, then, patterning a photoresist on the dielectric layer to define the contact.