Manufacture method of DMOS transistor

A manufacturing method of DMOS transistor is provided. First, provide a substrate with gate oxide layer and trench type gate. Then implant the first type ion into the two sides of the trench type gate to form the first-type doped region. Second, deposit an insulated layer on the substrate and then s...

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Bibliographic Details
Main Authors NI, CHENG-TSUNG, TZENG, MAU-SUNG, CHUANG, CHIAO-SHUN, CHANG, CHIEN-PING
Format Patent
LanguageEnglish
Published 21.11.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A manufacturing method of DMOS transistor is provided. First, provide a substrate with gate oxide layer and trench type gate. Then implant the first type ion into the two sides of the trench type gate to form the first-type doped region. Second, deposit an insulated layer on the substrate and then selectively etch the insulated layer to make a source contact which top is wider than the bottom and remain an insulated structure on the trench type gate. Third, implant the second type ion through the source contact to form the second-type doped region on the center of the first-type doped region.
Bibliography:Application Number: TW20010128819