Method for preventing nitrogen contamination in silicon ions implantation

A method for preventing contamination of N2+ molecules during silicon ion implantation comprises at least: increasing the current of source magnet during silicon ion implantation to dissociate N2 into N+. As a preferable example, it is necessary for the ratio of N2+/N+ to be less than 1, and an ener...

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Bibliographic Details
Main Authors YE, SHU-YOU, CHEN, LIU-JANG, TSAI, CHAU-JIE, CHEN, JR-BIN, HUANG, JENG-YI
Format Patent
LanguageEnglish
Published 11.09.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for preventing contamination of N2+ molecules during silicon ion implantation comprises at least: increasing the current of source magnet during silicon ion implantation to dissociate N2 into N+. As a preferable example, it is necessary for the ratio of N2+/N+ to be less than 1, and an energy analyzer is used to select silicon ions to perform silicon ion implantation.
Bibliography:Application Number: TW20010122392