Vertical replacement gate (VRG) MOSFET with a conductive layer adjacent a source/drain region and method of manufacture therefor

• Main Authors: HERGENROTHER, JOHN MICHAEL, CHEW, HONGZONG, CHYAN, YIH-FENG, MONROE, DONALD PAUL, MA, YI
• Format: Patent
• Language: English
• Published: 11.08.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a VRG structure formed on a semiconductor wafer substrate. The VRG structure has a first source/drain region located in a semiconductor wafer substrate, and a conductive layer located adjacent the source/drain region, a second source/drain region and a conductive channel that extends from the first source/drain region to the second source/drain region. The conductive layer provides an electrical connection to the first source/drain region. The conductive layer may have a low sheet resistance that may be less than about 50 /square or less than about 20 /square, to the first source/drain region.