Hot plate and manufacture method of semiconductor device

• Main Authors: WADA, JUNICHI, KATATA, TOMIO
• Format: Patent
• Language: English
• Published: 11.08.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In the manufacture method of semiconductor device of this invention, an electrostatic fixation hot plate 10 in a semiconductor manufacture apparatus fixes a wafer 3 in a fashion that the fixation force increases from the central portion to the edge of the wafer. This is achieved by dividing an electrostatic fixation electrode 2 into two portions at least from the central portion 4 towards the edge direction and an applied fixation electrical force is increased gradually from the central inner portion 4 to the outer portion 5. Firstly, the fixation force is applied from the wafer center and temperature is raised. Therefore, the wafer outer portion can be induced thermal expansion easily due to the weak fixation force. This can maintain the wafer in a low stress state and thus prevent wafer breakage. Moreover, the increase of pressure and de-chuck parameters can be selected and pre-determined according to inside state of monitored wafer in advance.