Method for forming borderless contact

• Main Authors: LIOU, MENGANG, WU, LIN-JIUN, LIN, GUANG-MING
• Format: Patent
• Language: English
• Published: 21.07.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A kind of method for forming borderless contact is disclosed in the present invention. The present invention provides a kind of method for forming borderless contact in semiconductor fabrication process. By forming two or more than two dielectric layers as the etching stop layer on the substrate and...