Method for forming borderless contact

• Main Authors: LIOU, MENGANG, WU, LIN-JIUN, LIN, GUANG-MING
• Format: Patent
• Language: English
• Published: 21.07.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A kind of method for forming borderless contact is disclosed in the present invention. The present invention provides a kind of method for forming borderless contact in semiconductor fabrication process. By forming two or more than two dielectric layers as the etching stop layer on the substrate and the active area, it becomes easy to control the etching depth and the critical dimension of the contact window. Therefore, both substrate and device can be prevented from the damage caused by over etch and position shift of critical dimension such that excellent device characteristic can be maintained.