Forming method of passivation layer in semiconductor fabrication process
A kind of forming method of passivation layer for semiconductor fabrication process is disclosed in the present invention. At first, the silicon oxide/silicon nitride layers used for pad layer are formed on the metal layer. Then, an undoped silicon glass layer is formed on the metal layer. After tha...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
21.07.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A kind of forming method of passivation layer for semiconductor fabrication process is disclosed in the present invention. At first, the silicon oxide/silicon nitride layers used for pad layer are formed on the metal layer. Then, an undoped silicon glass layer is formed on the metal layer. After that, a silicon nitride layer is formed on the undoped silicon glass layer by using plasma enhanced chemical vapor phase deposition (PECVD) method. |
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Bibliography: | Application Number: TW19970112343 |