Forming method of passivation layer in semiconductor fabrication process

A kind of forming method of passivation layer for semiconductor fabrication process is disclosed in the present invention. At first, the silicon oxide/silicon nitride layers used for pad layer are formed on the metal layer. Then, an undoped silicon glass layer is formed on the metal layer. After tha...

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Main Authors CHENG, MENG-JAU, YAU, LIANG-JI, DU, YOU-LUEN, TSAI, GUAN-JR, HUANG, SEN-HUAN
Format Patent
LanguageEnglish
Published 21.07.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A kind of forming method of passivation layer for semiconductor fabrication process is disclosed in the present invention. At first, the silicon oxide/silicon nitride layers used for pad layer are formed on the metal layer. Then, an undoped silicon glass layer is formed on the metal layer. After that, a silicon nitride layer is formed on the undoped silicon glass layer by using plasma enhanced chemical vapor phase deposition (PECVD) method.
Bibliography:Application Number: TW19970112343