CVD of integrated Ta and TaNx films from tantalum halide precursors

• Main Authors: WESTENDORP, JOHANNES F. M, HAUTALA, JOHN J
• Format: Patent
• Language: English
• Published: 21.04.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum/tantalum nitride (Ta/TaNx) bilayer films from inorganic tantalum pentahalide (TaX5) precursors and nitrogen is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated reaction chamber. The vapor is combined with a process gas to deposit a Ta film and a process gas containing nitrogen to deposit a TaNx film on a substrate that is heated to 300 DEG C to 500 DEG C. The deposited Ta/TaNx bilayer film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.