Method and apparatus for monitoring process exhaust gas, semiconductor-manufacturing device, and method and system for managing semiconductor manufacturing device

• Main Authors: SHIMODA, TAKAHIRO, KOMIYAMA, KIYOSHI, NISHIKAWA, HIROSHI
• Format: Patent
• Language: English
• Published: 21.03.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

In the present invention, process exhaust gas is collected to analyze its components using a Fourier transform spectroscope (FT-R) (26). The results of analysis are compared with the reference values derived from a process carried out under reference process conditions. If the amount of any analyzed component exceeds a predetermined range with respect to the reference values, a signal indicative of trouble in the process is produced. Alternatively, the process conditions may be automatically controlled instead of producing such a signal indicative of trouble.