Integrated method and apparatus for forming an enhanced capacitor
A novel method and apparatus for forming a capacitor is described. According to the present invention, a substrate having a bottom electrode is provided. A metal-oxide dielectric film is then formed on the bottom electrode. The metal-oxide dielectric film is annealed with remotely generated radicals...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
11.02.2002
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A novel method and apparatus for forming a capacitor is described. According to the present invention, a substrate having a bottom electrode is provided. A metal-oxide dielectric film is then formed on the bottom electrode. The metal-oxide dielectric film is annealed with remotely generated radicals. A metal-nitride layer is then formed on the annealed metal-oxide dielectric film. A top electrode is then formed on the metal-nitride barrier layer. |
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Bibliography: | Application Number: TW200089119692 |