Manufacture method of metal salicide

This invention provides the manufacture method of metal salicide. The processing steps are described as follows. A silicon substrate is given, a gate and a source/drain are formed on the substrate and a native oxide layer is present on the surface of the gate and the source/drain. The native oxide i...

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Bibliographic Details
Main Authors SHEN, YI-PIN, CHEN, CHEN-SHIEN, CHEN, PO-JEN, LEE, JIUNUNG, KO, CHENG-YING
Format Patent
LanguageEnglish
Published 01.12.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This invention provides the manufacture method of metal salicide. The processing steps are described as follows. A silicon substrate is given, a gate and a source/drain are formed on the substrate and a native oxide layer is present on the surface of the gate and the source/drain. The native oxide is then removed by using hydrogen-containing gases to expose the surface of the gate and the source/drain. A metal salicide is formed on the surface of the gate and the source/drain. A further decrease in the resistance of gate and source/drain can be achieved by implementing this invention which also can improve improper bridge phenomenon and prevent increase in the junction leakage current.
Bibliography:Application Number: TW20000107064