Method for uniformly etching deep trench structure

The present invention provides a method for uniformly etching deep trench structure, which comprises the steps of: providing a substrate; forming a mask layer on the substrate; removing the mask layer at edge area of the substrate; defining a plurality of etched openings on the mask layer; and using...

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Bibliographic Details
Main Authors TSAI, NIEN-YU, LEE, RAY C, LIN, MING-HUNG, WANG, YUNGING
Format Patent
LanguageEnglish
Published 01.10.2001
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a method for uniformly etching deep trench structure, which comprises the steps of: providing a substrate; forming a mask layer on the substrate; removing the mask layer at edge area of the substrate; defining a plurality of etched openings on the mask layer; and using the etched openings to perform an etching operation on the substrate to uniformly etch and form a plurality of deep trench structures by the influence of the removed mask layer at the edge area of the substrate.
Bibliography:Application Number: TW20000116819