Method for patterning thin film

• Main Authors: MACHIDA, MASAHIKO, MIZOUCHI, KIYOTSUGU, KUBO, AKIRA
• Format: Patent
• Language: English
• Published: 01.08.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

The invented method for patterning thin film, which is used for patterning a thin film deposited on a substrate according to a pattern layer arranged on said thin film, is composed of the following steps. The first step is to dip the substrate in the first solution in order to etch thin film based on the pattern layer. The second step is to spread the second solution which has the same composition as the etching solution used in the third step on the thin film of substrate for cleaning the substrate. And, the third step is to dip the substrate in the third solution for further etching off the thin film.