Method for manufacturing complementary metal oxide semiconductor transistor
The present invention provides a method for manufacturing complementary metal oxide semiconductor transistor on a semiconductor chip. The semiconductor chip comprises a substrate,a first gate on the substrate for forming the PMOS transistor of the CMOS transistor, and a second gate on the substrate...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
07.06.2001
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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