Method for manufacturing complementary metal oxide semiconductor transistor

• Main Authors: SHENG, YIUNG, CHEN, CHIN-LAI, HUANG, CHENG-TUNG, HSU, SHIHIEH
• Format: Patent
• Language: English
• Published: 07.06.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The present invention provides a method for manufacturing complementary metal oxide semiconductor transistor on a semiconductor chip. The semiconductor chip comprises a substrate,a first gate on the substrate for forming the PMOS transistor of the CMOS transistor, and a second gate on the substrate...