Semiconductor device and process of making the same

• Main Author: ENDO, SHUNICHI
• Format: Patent
• Language: English
• Published: 11.04.2001
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In a semiconductor device, a connecting layer is provided between a silicon-containing insulating film SiO2, or a metallic wiring layer, and a fluorine-added carbon CF film so as to increase intimate connection between the two layers. In order to achieve this purpose, SiC film-forming gases, such as an SiH gas and a C2H4 gas, are formed into a plasma for forming a connecting layer SiC film 200 on the upper side of the SiO2 film 110. Then, an SiH4 gas and a C2H4 gas, as well as a C4H8 gas and a C2H4 gas, are introduced to conduct a film-forming gas switching process for one min. Thereafter, the CF film-forming gases, such as the C4H8 gas and the C2H4 gas, are formed into a plasma for forming a CF film 120 on the SiC film 200. As such, during the film-forming gas switching process, the film-forming gases for both SiC and CF films are present. Therefore, near the boundaries of the SiC film 200 and the CF film 120, Si and C can be combined with one another beyond either sides of the film-forming gases, thereby increasing an intimate connection between the films, i.e. improving an intimate connection between the SiO2 film 110 and the CF film 120.