Method and device for displacing wafers in a deposition reactor

• Main Authors: DAUCHESS III, DANIEL A, BAKER, KENNETH W, STINSON, MARK G, CHOWNING, GREGORY K
• Format: Patent
• Language: English
• Published: 01.01.2001
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A low pressure chemical vapor deposition reactor for deposition of material on a plurality of wafers in a wafer carrier. The wafer carrier supports the wafers in a generally upright position and each wafer is supported at a peripheral edge of the wafer. The reactor includes a reactor vessel having a chamber sized for receiving the wafer carrier loaded with wafers to contain the wafers for deposition of material from vapor flowing through the chamber. An elongate beam supports the wafer carrier at a first end of the beam in the reactor chamber. A mechanism displaces the elongate beam such that the wafers within the wafer carrier move relative to the wafer carrier to inhibit formation of material bridges between the wafer carrier and the wafers caused by deposition of material from vapor in the reaction chamber.