Control of SiO2 etch rate using dilute chemical etchants in the presence of a megasonic field

• Main Authors: MALIK, IGOR JAN, SHIVE, LARRY WAYNE
• Format: Patent
• Language: English
• Published: 21.07.2000
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

Processes for cleaning a silicon body and for controllably decreasing the thickness of a silicon dioxide layer overlaying a silicon substrate are disclosed. The processes comprising chemically etching a silicon dioxide layer with a dilute etchant in the presence of a megasonic field. The concentration of the etchant is preferably less than its diffusion-rate-limiting threshold concentration at a given temperature. When aqueous alkaline hydroxyl ion etchants are employed, the concentration of etchant is preferably less than about 300 ppm by weight relative to water. The etching is discontinued before the silicon substrate is exposed to the etchant. The etch rate is controlled to within about 2 x 10<-5> m/min (0.2 /min) of a target etch rate which ranges from about 3 x 10 <-5> m/min (0.3 /min) to about 4 x 10 <-4> m/min (4.0 /min). A simpler, more cost-effective chemical process for robustly cleaning silicon bodies or for producing very thin gate oxides is achieved.