Method for improving contact resistance

A method for improving contact resistance. A substrate having transistors thereon is provided; then a load line is formed and patterned over the substrate, which is served resistor and interconnection respectively; photoresist is formed on the load line for defining interconnection region; first ion...

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Bibliographic Details
Main Authors LIAU, HUNG -JE, JANG, YUNG-RUNG
Format Patent
LanguageEnglish
Published 01.04.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for improving contact resistance. A substrate having transistors thereon is provided; then a load line is formed and patterned over the substrate, which is served resistor and interconnection respectively; photoresist is formed on the load line for defining interconnection region; first ion implantation is performed for driving ions into the interconnection region; then a second ion implantation is performed for driving ions into a junction between the interconnection region and the substrate, and a junction between the interconnection region and a gate electrode.
Bibliography:Application Number: TW19980109844