Method for forming pattern in semiconductor device, mask used in method and method for manufacturing mask

A method for forming a pattern on a semiconductor substrate using a half tone-type phase shift mask , a mask used for the method and a method for manufacturing the mask are provided. The method for forming the pattern includeds the steps of forming a layer to be patterned on a semiconductor substrat...

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Bibliographic Details
Main Authors LIM, SUNGUL, MOON, SUNG-YONG
Format Patent
LanguageEnglish
Published 01.04.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a pattern on a semiconductor substrate using a half tone-type phase shift mask , a mask used for the method and a method for manufacturing the mask are provided. The method for forming the pattern includeds the steps of forming a layer to be patterned on a semiconductor substrate, forming an anti-reflective layer on the layer, forming a photsosensitive layer on the anti-refective layer, and performing a photolithography using a mask. Threrfore, according to the method for forming the pattern of the presnet invention, it is possible to reliably from a pattern since it is possible to preent a ""side-lobe phencomenon"".
Bibliography:Application Number: TW199685113265