Fast flash memory cell

A fast flash memory cell, including: a plurality of memory cell groups, having a plurality of local bitlines and wordlines, in the form of matrix; connecting between the corresponding bitlines between two memory cell groups, a pair of stated transistors, in response to the stage signals emitted by t...

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Bibliographic Details
Main Authors CHOI, YOUNG-JUNG, PARK, JOO-WEON
Format Patent
LanguageChinese
English
Published 21.05.1999
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A fast flash memory cell, including: a plurality of memory cell groups, having a plurality of local bitlines and wordlines, in the form of matrix; connecting between the corresponding bitlines between two memory cell groups, a pair of stated transistors, in response to the stage signals emitted by the stage signal generator, for selective opening; and a plurality of common bitlines, connected respectively to the connection nodes on the stage transistors.
Bibliography:Application Number: TW19960112532