Method for manufacturing capacitor of semiconductor device

• Main Authors: KANG, SEONG-HUN, LEE, JUNG-KYU, KOH, YOUNG-LARK
• Format: Patent
• Language: Chinese; English
• Published: 11.01.1999
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for manufacturing a capacitor of semiconductor device, comprizing the steps of forming a first conducting film over an insulating film having contact holes on a semiconductor substrate, forming an O3 TEOS USG (Ozone Tetraethylorthosilicate Undoped Silicate) film over the first conducting film, forming an O3 TEOS USG film pattern over the contact holes, lower electrode of the capacitor, etching the first conducting film using the O3 TEOS USG film pattern as an etch mask, performing wet etch for the surface treatment of the O3 TEOS USG film pattern, depositing a second conducting film over the overall surface of the wet-etched wafer, performing etch back over the overall surface of the second conducting film, and removing the etch back-exposed TEOS USG film pattern by wet etch. In addition, an oxide film can be deposited in plasma-enhanced environment after the above step of forming the O3 TEOS USG film.