Process for producing semiconductor wafers

• Main Author: HANIFI MALCOK
• Format: Patent
• Language: Chinese; English
• Published: 21.04.1998
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOTDIRECTED TO A PARTICULAR RESULT; DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g.ARRANGEMENTS FOR COPYING OR CONTROLLING; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GLASS; GRINDING; MACHINE TOOLS; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OFPARTICULAR DETAILS OR COMPONENTS; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; MINERAL OR SLAG WOOL; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING; WORKING CEMENT, CLAY, OR STONE; WORKING STONE OR STONE-LIKE MATERIALS

A process for producing semiconductor wafers, which comprises repetitively using a grinding tool to grind the end plane of a monoconductor, and using a cutting tool to cut off a semiconductor wafer from the monocrystal, in which a grinding loss of specified depth will be generated during grinding and the cutting face of the semiconductor wafer which has been cut shall be parallel to the polished end plane as much as possible, the process comprising: (a) simultaneously polishing a portion of the surface of an auxiliary object, the surface of the auxiliary object being substantially on the same plane with the end face of the monocrystal, and the thickness of the wear material on the auxiliary object being equal to the polishing loss on the auxiliary object; (b) using the cutting tool to cut the auxiliary object on the cutting plane and generating a cut section of the auxiliary object on which a portion of the surface is polished and a portion of the surface is not polished; and (c) measuring the polishing loss