Programming switch for non-volatile memory integrated circuit

• Main Authors: LIN, DENG-TSAIR, LIN, YIH-BIN
• Format: Patent
• Language: Chinese; English
• Published: 01.11.1996
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A programming switch for non-volatile memory integrated circuit mainly comprises of: (1) one programming voltage Vpp generated inside circuit by itself, and with typical value between 15 volt to 20 volt; (2) one supplied power Vcc which is external power; (3) one input end whose voltage Vin with two different values, logical "1" and logical "0"; (4) one output end with voltage Vout; (5) two mutually inverse clock signal CK and CKB, which functions only when input voltage is logical "1"; (6) one first node and one second node; (7) one first enhanced NMOS transistor whose gate is connected to the second node, drain and source connecting between the programming voltage Vpp and the first node; (8) one second enhanced NMOS transistor for connecting to diode, whose gate is connected to the first node, drain and source connecting between the first node and the second node; (9) one third enhanced NMOS transistor for connecting to diode, whose gate is connected to the second node, drain and source connecting between t