High-voltage transistor, level-up shifting circuit, and semiconductor device

A high-voltage transistor includes a well region disposed in a semiconductor substrate, a gate structure disposed above the well region, a gate oxide layer disposed between the gate structure and the well region, a first drift region, and a second drift region. A first portion of the gate oxide laye...

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Bibliographic Details
Main Authors KUO, CHINIA, CHANG, WEI-HSUAN, TSAI, MING-HUA
Format Patent
LanguageChinese
English
Published 01.07.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A high-voltage transistor includes a well region disposed in a semiconductor substrate, a gate structure disposed above the well region, a gate oxide layer disposed between the gate structure and the well region, a first drift region, and a second drift region. A first portion of the gate oxide layer is thicker than a second portion of the gate oxide layer. A thickness of the second portion is greater than or equal to one-eighth of a thickness of the first portion. The first drift region and the second drift region are disposed in the well region, at least partially located at two opposite sides of the gate structure, respectively, and disposed adjacent to the first portion and the second portion, respectively. A conductivity type of the first drift region is identical to that of the second drift region. A level-up shifting circuit includes the high-voltage transistor described above.
Bibliography:Application Number: TW20220150397