Etchant composition for metal layer containing silver or indium oxide layer and preparation method thereof minimizing film damage and defects and ensuring excellent etching characteristics

The present invention relates to an etchant composition for metal layer containing a silver or an indium oxide layer and a preparation method thereof. According to the present invention, by inhibiting damage to the lower film and minimizing the generation of deviation defects and residues or precipi...

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Main Authors KIM, JAE-YEOP, KIM, YANG-RYEONG, PARK, SANG-SEUNG, LEE, BO-YEON, WOO, SEUNG-HEE, LEE, HEE-WOONG, KIM, SE-HOON, JEONG, MIN-GYEONG
Format Patent
LanguageChinese
English
Published 01.07.2024
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Summary:The present invention relates to an etchant composition for metal layer containing a silver or an indium oxide layer and a preparation method thereof. According to the present invention, by inhibiting damage to the lower film and minimizing the generation of deviation defects and residues or precipitates, excellent etching characteristics are exhibited. An etchant composition for metal layer containing a silver or an indium oxide layer includes: a nitrogen compound; a sulfate; a sulfonic acid compound; and a carboxylic acid. The sulfonic acid compound includes a compound represented by chemical formula 1 or a salt thereof; and a compound represented by chemical formula 2 or a salt thereof, In the chemical formula 1, R1 is C1-C10 alkyl group. In the chemical formula 2, R2 is (C1-C10 alkyl) benzyl, benzyl, amino (C1-C10 alkyl), C1-C10 alkyl or aminobenzyl.
Bibliography:Application Number: TW202312145957