Substrate processing apparatus

• Main Authors: EOM, JEONG-UK, SHIN, HYUN-WOOK, SONG, MIN-JIN, SO, JAE-WUK
• Format: Patent
• Language: Chinese; English
• Published: 16.06.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

A substrate processing apparatus according to an example embodiment includes: a chamber having a sidewall; a susceptor mounting a substrate inside the chamber; an upper dome covering an upper surface of the chamber and formed of a dielectric material; a lower dome covering a lower surface of the chamber and formed of a dielectric material; a liner disposed on internal side of the chamber and disposed between the upper dome and the lower dome; and an antenna disposed on the upper dome and generating inductively-coupled plasma. A ratio of a diameter of the antenna to a diameter of the substrate may be 80 percent to 120 percent.