Antifuse-type nonvolatile memory and control method thereof

An antifuse-type non-volatile memory and a control method for the antifuse-type non-volatile memory are provided. During a program action of a program cycle, a timing controller generates a timing control signal. According to the timing control signal, a word line driver is controlled to provide an...

Full description

Saved in:
Bibliographic Details
Main Authors PENG, JEN-YU, TAN, MING-HSUAN, CHANG, CHIA-FU
Format Patent
LanguageChinese
English
Published 16.05.2024
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:An antifuse-type non-volatile memory and a control method for the antifuse-type non-volatile memory are provided. During a program action of a program cycle, a timing controller generates a timing control signal. According to the timing control signal, a word line driver is controlled to provide an on voltage and an off voltage to an activated word line. In a total time period of plural on periods, the program current is sufficient to rupture a gate oxide layer of an antifuse transistor in the selected memory cell, and a heating process is completed. Consequently, the gate oxide layer of the antifuse transistor is in a solid rupture state. Consequently, the program action can be successfully performed on the selected memory cell.
Bibliography:Application Number: TW202312138089