Method for manufacturing thin film, thin film, and apparatus for processing substrate

• Main Authors: JIN, SE-WHAN, EOM, JEONG-UK, SONG, MIN-JIN, SO, JAE-WUK
• Format: Patent
• Language: Chinese; English
• Published: 16.05.2024
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a method of manufacturing a thin film, which includes a first formation step of injecting a first source gas including a high-k dielectric material to form a first thin film layer on a substrate; a second formation step of injecting a second source gas including a high-k dielectric material to form a second thin film layer on the substrate; and a crystallization step of crystallizing at least one of the first thin film layer and the second thin film layer by using plasma, a thin film, and a substrate processing apparatus.