Method for forming substrate

A manufacturing process is described to evaluate and select raw semiconductor wafers in preparation for epitaxial layer formation. The manufacturing process first produces a single crystal ingot during which a seed pulling velocity and temperature gradient are closely controlled. The resulting ingot...

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Bibliographic Details
Main Authors CHEN, PU-FANG, CHEN, CHING-YU
Format Patent
LanguageChinese
English
Published 01.05.2024
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PERFORMING OPERATIONS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TRANSPORTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
WORKING CEMENT, CLAY, OR STONE
WORKING STONE OR STONE-LIKE MATERIALS
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Summary:A manufacturing process is described to evaluate and select raw semiconductor wafers in preparation for epitaxial layer formation. The manufacturing process first produces a single crystal ingot during which a seed pulling velocity and temperature gradient are closely controlled. The resulting ingot is vacancy-rich with relatively few self-interstitial defects. Selected wafers can advance to a high-temperature nitridation annealing operation that further reduces the number of interstitials while increasing the vacancies. Substrates characterized by a high vacancy density can then be used to optimize an epitaxial layer deposition process.
Bibliography:Application Number: TW202312130006