Semiconductor substrate and method for manufacturing semiconductor substrate

• Main Author: UCHIDA, HIDETSUGU
• Format: Patent
• Language: Chinese; English
• Published: 16.04.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are: a semiconductor substrate in which occurrence of interface resistance in a junction interface can be prevented; and a method for manufacturing the semiconductor substrate. This method for manufacturing a semiconductor substrate comprises: a damaged layer formation step for forming a damaged layer in at least one of a first joining target surface of a first semiconductor substrate or a second joining target surface of a second semiconductor substrate; a specific element introduction step for introducing a specific element into at least one of the first joining target surface and the second joining target surface; a joining step for joining the first joining target surface and the second joining target surface together to form a junction semiconductor substrate having a junction interface; and a thermal treatment step for subjecting the junction semiconductor substrate to a thermal treatment. The thermal treatment step is for causing the specific element introduced into at least one of the first s