Semiconductor structure and method for manufacturing the same

The present disclosure provides an embodiment of a method. The method includes patterning a substrate to form trenches; etching the substrate, thereby modifying the trenches with round tips; forming a stack including conductive layers and dielectric layers in the trenches, wherein the conductive lay...

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Bibliographic Details
Main Authors CHENG, HSIN-LI, CHEN, HSIN-LIANG, KUO, FUIANG, HSU, TINGN
Format Patent
LanguageChinese
English
Published 01.04.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present disclosure provides an embodiment of a method. The method includes patterning a substrate to form trenches; etching the substrate, thereby modifying the trenches with round tips; forming a stack including conductive layers and dielectric layers in the trenches, wherein the conductive layers and the dielectric layers alternate with one another within the stack; forming an insulating compressive film in the trenches, thereby sealing voids in the trenches; and forming conductive plugs connected to the conductive layers, respectively.
Bibliography:Application Number: TW202312126260