Stripper composition for IGZO substrate, method of preparation thereof and semiconductor device capable of preventing corrosion of the IGZO substrate and improving photoresist stripping performance

• Main Authors: LEE, SEUNG-EUN, SIM, HA-BIN, PARK, JONG-MO, CHO, JANG-WOO, PARK, JOON-HYUN, KIM, SE-HOON, LEE, DONG-HUN, YOON, JOON-SIK
• Format: Patent
• Language: Chinese; English
• Published: 01.04.2024
• Subjects: ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES; APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CANDLES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; CINEMATOGRAPHY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DETERGENT COMPOSITIONS; DETERGENTS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; FATTY ACIDS THEREFROM; HOLOGRAPHY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS THEREFOR; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; RECOVERY OF GLYCEROL; RESIN SOAPS; SEMICONDUCTOR DEVICES; SOAP OR SOAP-MAKING; USE OF SINGLE SUBSTANCES AS DETERGENTS

The present invention relates to a composition for stripping photoresist of IGZO substrate, a method of preparation thereof and a semiconductor device. According to the present invention, the corrosion of the IGZO substrate can be prevented, and the photoresist stripping performance can be improved. The present invention provides an etching solution composition, which includes: two or more organic solvents; and an amine compound represented by chemical formula 1 or chemical formula 2. The chemical formula 1 is R1-NH2, where the R1 is a hydroxyl (C1-6) alkyl group or a hydroxyl (C1-4) alkoxy (C1-4) alkyl group, and the alkyl group or alkoxy group is a straight chain or a branched chain. In the chemical formula 2, X is N or C, R2 is a hydrogen atom, a hydroxyl (C1-6) alkyl group or a hydroxyl (C1-4) alkoxy (C1-4) alkyl group, and the alkyl group or alkoxy group is a straight chain or a branched chain.