Nitride semiconductor substrate and method for producing same

• Main Authors: KUBONO, IPPEI, HAGIMOTO, KAZUNORI
• Format: Patent
• Language: Chinese; English
• Published: 01.03.2024
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention is a nitride semiconductor substrate comprising: a silicon substrate having a resistivity of 1000 [Omega].cm or more or a base substrate equipped on the surface thereof with a silicon layer having a resistivity of 1000 [Omega].cm or more; and a group III nitride semiconductor thin film epitaxially formed on the silicon substrate or the silicon layer. The nitride semiconductor substrate is characterized in that the average value of the carbon concentration within the group III nitride semiconductor thin film is 3E + 18 atoms/cm3 or less. It is thus possible to provide a nitride semiconductor substrate with high thermal conductivity and little high-frequency loss, and a method for producing the same.