Silicon etching solution and method for producing silicon etching solution, method for treating substrate, and method for producing silicon device

A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24 DEG C.

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Bibliographic Details
Main Authors OKIMURA, KOHSHIRO, SEIKE, YOSHIKI, HITOMI, TATSUYA, NORO, KOHSUKE
Format Patent
LanguageChinese
English
Published 01.03.2024
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:A silicon etching solution including an aqueous alkaline solution containing a hypohalite ion in a range of 0.05 mmol/L or greater and 5 mmol/L or less and having a pH of 12.5 or greater at 24 DEG C.
Bibliography:Application Number: TW202312132819