Substrate processing method and substrate processing device

This substrate processing method and this substrate processing device, by heating fluoride-containing phosphoric acid which is phosphoric acid that contains fluoride, maintains the fluoride-containing phosphoric acid at a constant etching temperature that either matches or approximates an isokinetic...

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Bibliographic Details
Main Authors HO, LINH DA, INABA, MASAKI
Format Patent
LanguageChinese
English
Published 01.03.2024
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:This substrate processing method and this substrate processing device, by heating fluoride-containing phosphoric acid which is phosphoric acid that contains fluoride, maintains the fluoride-containing phosphoric acid at a constant etching temperature that either matches or approximates an isokinetic temperature at which, at the concentration of fluoride in the fluoride-containing phosphoric acid, the etch rate of a silicon oxide film O1 and the etch rate of a silicon nitride film N1 are equal to one another. By bringing the fluoride-containing phosphoric acid at the etching temperature into contact with the silicon oxide film O1 and the silicon nitride film N1, which have been formed on a substrate W, this method and device etch the silicon oxide film O1 and the silicon nitride film N1 with the fluoride-containing phosphoric acid.
Bibliography:Application Number: TW202312117119