Programming method of non-volatile memory cell

A programming method of a non-volatile memory cell is provided. The non-volatile memory cell includes a memory transistor. Firstly, a current limiter is provided, and the current limiter is connected between a drain terminal of the memory transistor and a ground terminal. Then, a program voltage is...

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Bibliographic Details
Main Authors LUNG, CHANGUN, LO, CHUN-YUAN, LI, CHUN-HSIAO, HSU, CHIA-JUNG
Format Patent
LanguageChinese
English
Published 16.02.2024
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A programming method of a non-volatile memory cell is provided. The non-volatile memory cell includes a memory transistor. Firstly, a current limiter is provided, and the current limiter is connected between a drain terminal of the memory transistor and a ground terminal. Then, a program voltage is provided to a source terminal of the memory transistor, and a control signal is provided to a gate terminal of the memory transistor. In a first time period of a program action, the control signal is gradually decreased from a first voltage value, so that the memory transistor is firstly turned off and then slightly turned on. When the memory transistor is turned on, plural hot electrons are injected into a charge trapping layer of the memory transistor.
Bibliography:Application Number: TW202312128406