Memory device, non-transitory medium, and method of performing read operation from memory device

The present invention discloses systems, methods, and media for optimizing temporary read errors (TREs) in three-dimensional (3D) NAND memory devices. A memory device may include a plurality of memory cells configured as an array of NAND strings, a plurality of word lines coupled to the memory cells...

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Bibliographic Details
Main Authors JIA, JIAN-QUAN, ZHOU, WEN, YOU, KAI-KAI, JIA, XIN-LEI, JIN, LEI, YANG, KUN, LUO, ZHE, LI, DA, XU, PAN, HAN, JIA-YIN
Format Patent
LanguageChinese
English
Published 16.02.2024
Subjects
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The present invention discloses systems, methods, and media for optimizing temporary read errors (TREs) in three-dimensional (3D) NAND memory devices. A memory device may include a plurality of memory cells configured as an array of NAND strings, a plurality of word lines coupled to the memory cells, and a controller. The controller is configured to determine whether a next read operation is a first read operation after the memory device resumes from an idle state, and the controller is configured to, in response to an acknowledgement of the determination, control the memory device to perform an extension of a pre-stage of the first read operation prior to a read stage of the first read operation.
Bibliography:Application Number: TW202211149848