Semiconductor device and imaging device

The present disclosure pertains to a semiconductor device and an imaging device which enable reduction in production cost. This semiconductor device comprises: a first semiconductor in which a plurality of first junction electrodes are formed; a second semiconductor in which second joint electrodes...

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Bibliographic Details
Main Authors YAMADA, KYOSUKE, MOMIUCHI, YURIKO, ONODERA, TAKUMI, FUJIMAGARI, JUNICHIRO
Format Patent
LanguageChinese
English
Published 01.02.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:The present disclosure pertains to a semiconductor device and an imaging device which enable reduction in production cost. This semiconductor device comprises: a first semiconductor in which a plurality of first junction electrodes are formed; a second semiconductor in which second joint electrodes joined to the first joint electrodes are formed and which has a smaller planar size than the first semiconductor; and a third semiconductor in which third joint electrodes joined to the first joint electrodes are formed and which has a smaller planar size than the first semiconductor. The second semiconductor and the third semiconductor are joined to the same surface of the first semiconductor. The third joint electrodes include an electrode formed to have a larger planar size than the second joint electrodes. This disclosure can, for example, be applied to a solid-state imaging device or the like.
Bibliography:Application Number: TW202312121904