Method for forming semiconductor device structure

• Main Authors: CHANG, SHIH-YU, CHEN, HUANG-MING, CHIU, CHIENIH, CHEN, CHIEN-HAN
• Format: Patent
• Language: Chinese; English
• Published: 01.02.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method of forming a semiconductor device structure is disclosed. First and second etch stop layers are formed overlying a semiconductor structure having a conductive feature formed therein. A dielectric layer is formed overlying the second etch stop layer, and a hard mask, that comprises a tungsten-based material, is formed overlying the dielectric layer, and patterned. A resist layer is formed over the patterned hard mask. Using the patterned resist layer as a mask, a first etching process is performed to form a via opening that extends partially through the dielectric layer. Using the patterned hard mask as an etch mask, a second etching process (e.g., dry etching process) is performed to extend the via opening through the second etch stop layer, and a third etching process (e.g., wet etching process) is performed to extend the via opening through the first etch stop layer to reach the conductive feature.