Deposition of metal-containing films and chamber clean

• Main Authors: WANG, YU-XI, ERICKSON, ANN, HAUSMANN, DENNIS M, TENCE, DAVID ALAN, MCKERROW, ANDREW JOHN, KHOJASTEH, MALAK, GONG, BO, GANESAN, JEYA PRAKASH, DRAPER, EMILE C, BATZER, RACHEL E, AUSTIN, DUSTIN ZACHARY, JENG, ESTHER, EDMONDSON, BRYCE ISAIAH, FUSTER, HECTOR AARON, VOLOSSKIY, BORIS, HART, KYLE WATT, GUO, TONG-TONG, KWAN, MATTHEW PALMER, JUAREZ, FRANCISCO J
• Format: Patent
• Language: Chinese; English
• Published: 16.01.2024
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Methods of forming a metal-containing layer on a semiconductor substrate are provided and may include performing multiple cycles of (a) co-flowing a metal-containing precursor and a reactant into a processing chamber housing the semiconductor substrate; and (b) after (a), flowing the reactant into a processing chamber housing the semiconductor substrate, wherein the reactant does not react with gas-phase metal-containing precursor. Methods of cleaning the processing chamber are also provided.